SI6433DQ vishay siliconix document number: 70168 s-49534erev. g, 06-oct-97 www.vishay.com faxback 408-970-5600 2-1 p-channel 2.5-v (g-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 12 0.06 @ v gs = 4.5 v 4.0 12 0.09 @ v gs = 2.5 v 3.0 SI6433DQ d s s g 1 2 3 4 8 7 6 5 d s s d tssop-8 top view s* g d p-channel mosfet * source pins 2, 3, 6 and 7 must be tied common.
parameter symbol limit unit drain-source voltage v ds 12 v gate-source voltage v gs 8 v continuous drain current ( t j = 150 c ) a t a = 25 c i d 4.0 a continuous drain current (t j = 150 c) a t a = 70 c i d 3.2 a pulsed drain current i dm 20 a continuous source current (diode conduction) a i s 1.4 maximum power dissipation a t a = 25 c p d 1.5 w maximum power dissipation a t a = 70 c p d 1.0 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 83 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SI6433DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70168 s-49534erev. g, 06-oct-97
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 12 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 12 v, v gs = 0 v, t j = 70 c 25 a on - state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 10 a on - state drain current a i d(on) v ds = 5 v, v gs = 2.5 v 4 a drain - source on - state resistance a r ds(on) v gs = 4.5 v, i d = 4.0 a 0.040 0.06 drain - source on - state resistance a r ds(on) v gs = 2.5 v, i d = 2.0 a 0.060 0.09 forward transconductance a g fs v ds = 9 v, i d = 4.0 a 13 s diode forward voltage a v sd i s = 1.4 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g v 6v v 45v i 40a 20 40 c gate-source charge q gs v ds = 6 v, v gs = 4.5 v, i d = 4.0 a 3.5 nc gate-drain charge q gd 6.0 turn-on delay time t d(on) v6vr6 26 60 rise time t r v dd = 6 v, r l = 6 i1av 45vr6 47 100 turn-off delay time t d(off) dd , l i d 1 a, v gen = 4.5 v, r g = 6 87 180 ns fall time t f 47 100 source-drain reverse recovery time t rr i f = 1.4 a, di/dt = 100 a/ s 70 100 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI6433DQ vishay siliconix document number: 70168 s-49534erev. g, 06-oct-97 www.vishay.com faxback 408-970-5600 2-3
0 4 8 12 16 20 0246810 0 1 2 3 4 5 0 5 10 15 20 25 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 0 0.02 0.04 0.06 0.08 0.10 0246810 0 500 1000 1500 2000 2500 3000 024681012 0 4 8 12 16 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs = 4.5 thru 3 v v gs gate-to-source voltage (v) drain current (a) i d t c = 25 c 55 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v gs = 6 v i d = 4 a on-resistance ( r ds(on) w ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 4.5 v i d = 4 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) w ) v gs = 2.5 v v gs = 4.5 v 2 v 125 c 2.5 v
SI6433DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70168 s-49534erev. g, 06-oct-97
0 0.4 0.8 1.2 1.6 2.0 normalized thermal transient impedance, junction-to-ambient 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 83 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: 4. surface mounted p dm t 2 single pulse power square wave pulse duration (sec) normalized effective transient thermal impedance time (sec) power (w) 25 20 15 10 5 0 0.01 0.01 1 10 30 0 0.02 0.04 0.06 0.08 0.10 02468 0.6 0.4 0.2 0.0 0.2 0.4 0.6 50 25 0 25 50 75 100 125 150 1 10 20 i d = 4.0 a i d = 250 m a source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage on-resistance ( r ds(on) w ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) variance (v) v gs(th) t j = 25 c t j = 150 c
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